product specification www.jmnic.com silicon npn power transistors 2SC4833 description ? with ito-220 package ? switching power transistor pinning pin description 1 base 2 collector 3 emitter fig.1 simplified outline (ito-220) and symbol absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 5 a i cm collector current-peak 10 a i b base current 2 a i bm base current-peak 4 a p t total power dissipation t c =25 ?? 35 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? v dis dielectric strength terminals to case,ac1 minute 2 kv tor mounting torque (recomm ended torque:0.3nm) 0.5 nm thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 3.57 ?? /w jm nic
product specification www.jmnic.com jmnic silicon npn power transistors 2SC4833 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a ;i b =0 400 v v cesat collector-emitter saturation voltage i c =2.5a; i b =0.5a 1.0 v v besat emitter-base saturation voltage i c =2.5a; i b =0.5a 1.5 v i cbo collector cut-off current i ceo collector cut-off current at rated volatge 0.1 ma i ebo emitter cut-off current at rated volatge 0.1 ma h fe-1 dc current gain i c =2.5a ; v ce =2v 10 25 h fe-2 dc current gain i c =1ma ; v ce =2v 10 f t transition frequency i c =0.5a ; v ce =10v 13 mhz t on turn-on time 0.3 | s t s storage time 1.3 | s t f fall time i c =2.5a;i b1 =0.5a i b2 =1a ,r l =60 |? v bb2 =4v 0.1 | s
product specification www.jmnic.com jm n ic silicon npn power transistors 2SC4833 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.20 mm)
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